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APT50GT120B2R(G) APT50GT120LR(G)
1200V, 50A, VCE(ON) = 3.2V Typical
Thunderbolt IGBT(R)
The Thunderbolt IGBT(R) is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT(R) offers superior ruggedness and ultrafast switching speed.
Features
* Low Forward Voltage Drop * Low Tail Current * RoHS Compliant * RBSOA and SCSOA Rated * High Frequency Switching to 50KHz * Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified. Ratings
1200 30 94 50 150 150A @ 1200V 625 -55 to 150 300 Watts C Amps
Unit
Volts
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) ICES IGES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 3mA) Gate Threshold Voltage (VCE = VGE, IC = 2mA, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) Gate-Emitter Leakage Current (VGE = 20V)
2
Min
1200 4.5 2.7 -
Typ
5.5 3.2 4.0 -
Max
6.5 3.7 200 2.0 300
Unit
Volts
A mA nA
052-6270 Rev D 9-2008
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) 2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
4 5
APT50GT120B2R_LR(G)
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 600V IC = 50A TJ = 150C, RG = 1.0 , VGE = 15V, L = 100H, VCE= 1200V Inductive Switching (25C) VCC = 800V VGE = 15V IC = 50A RG = 4.7 TJ = +25C
7
Min 150 -
Typ 3300 500 220 10.5 340 40 210
Max -
Unit
pF
V
nC
A 24 53 230 26 TBD 5330 2330 24 53 255 48 TBD 5670 2850 J ns J ns
Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy
4 5 6
Inductive Switching (125C) VCC = 800V VGE = 15V IC = 50A RG = 4.7 TJ = 125C
-
Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions
R
JC
Min
-
Typ
-
Max
0.20 5.9
Unit
C/W gm
Junction to Case Package Weight
WT
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6270 Rev D 9-2008
Typical Performance Curves
150 125 100 75 50 25 0
V
GE
APT50GT120B2R_LR(G)
150 15V 13V IC, COLLECTOR CURRENT (A) 125 11V 100 10V 75 50 25 0 9V 8V 7V 6V 0 10 15 20 25 30 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 50A C T = 25C
J
= 15V
TJ= 25C TJ= 55C
IC, COLLECTOR CURRENT (A)
TJ= 125C TJ= 150C
0 1 2 3 4 5 6 7 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
150 125 100 75 50 25 0
16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 GATE CHARGE (nC) FIGURE 4, Gate charge 350 VCE = 960V VCE = 240V VCE = 600V
IC, COLLECTOR CURRENT (A)
TJ= -55C TJ= 25C TJ= 125C 0 10 12 14 2 4 6 8 VCE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6 5 4 3 2 1 0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
7 6 5 4 3 2 1 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 100A
IC = 100A IC = 50A IC = 25A
IC = 50A IC = 25A
9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
8
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 100
25
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A) 80
60
40 052-6270 Rev D 9-2008
20
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
0 25
Typical Performance Curves
35 td(ON), TURN-ON DELAY TIME (ns) 30 25 20 15 10 5 0
VCE = 800V TJ = 25C, or 125C RG = 1.0 L = 100H
APT50GT120B2R_LR(G)
300 td(OFF), TURN-OFF DELAY TIME (ns) 250 200 150 100 50 0
VCE = 800V RG = 1.0 L = 100H VGE =15V,TJ=125C VGE =15V,TJ=25C
VGE = 15V
0 20 40 60 80 100 120 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 160 140 120 tr, RISE TIME (ns) tr, FALL TIME (ns) 100 80 60 40 20 10 30 50 70 90 110 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 20,000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 1.0
G
0 20 40 60 80 100 120 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 60 50 40 30 20 10 0 10 30 50 70 90 110 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 6,000 5,000 4,000 3,000 2,000
TJ = 25C
V = 800V CE V = +15V GE R = 1.0
G
RG = 1.0, L = 100H, VCE = 800V
RG = 1.0, L = 100H, VCE = 800V
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
TJ = 25 or 125C,VGE = 15V
0
15,000
TJ = 125C
TJ = 125C
10,000
5,000
TJ = 25C
1,000 0
10 30 50 70 90 110 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 60,000 SWITCHING ENERGY LOSSES (J) SWITCHING ENERGY LOSSES (J) 50,000 40,000 30,000 20,000 10,000 0
Eon2,50A Eoff,100A Eoff,50A Eon2,25A Eoff,25A
V = 800V CE V = +15V GE T = 125C
J
0
10 30 50 70 90 110 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 20,000
V = 800V CE V = +15V GE R = 1.0
G
Eon2,100A
Eon2,100A
15,000
10,000
052-6270 Rev D 9-2008
Eon2,50A
5,000
Eoff,100A
Eoff,50A Eon2,25A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Eoff,25A
0
Typical Performance Curves
5000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 160 140 120 100 80 60 40 20
APT50GT120B2R_LR(G)
1000
100
Coes Cres
10 0 100 200 300 400 500 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
200 400 600 800 1000 1200 1400 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0
0
0.25 ZJC, THERMAL IMPEDANCE (C/W)
0. 2
D = 0.9 0.7 0.5 0.3
Note:
0.15
0. 1
PDM
t1 t2
0.05 0.1 0 10 0.05
-5
SINGLE PULSE 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
120 FMAX, OPERATING FREQUENCY (kHz) 100 80 60 40
100C
T = 125C J T = 75C C D = 50 % V = 800V CE R = 1.0
G
TJ (C)
0.0487 Dissipated Power (Watts) 0.00909 0.389
TC (C)
0.151
75C
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
ZEXT
20 0
10
20
30
40
50
60
70
80
90
100
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
052-6270 Rev D 9-2008
APT50GT120B2R_LR(G )
10% td(on) Gate Voltage TJ = 125C
APT30DQ120
tr
V CC IC V CE
90% Collector Current 5% Collector Voltage
Switching Energy
5%
10%
A D.U.T.
Figure 21, Inductive Switching Test Circuit
90% TJ = 125C 90% td(off) Collector Voltage Gate Voltage
Figure 22, Turn-on Switching Waveforms and Definitions
tf
10% Collector Current
0
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX(R) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Collector
Collector
20.80 (.819) 21.46 (.845)
25.48 (1.003) 26.49 (1.043)
0.40 (.016) 0.79 (.031)
4.50 (.177) Max.
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
Gate Collector Emitter
Gate Collector Emitter
052-6270 Rev D 9-2008
0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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